1994 data sheet mos field effect transistor description the 2sk2411 is n-channel mos field effect transistor designed for high speed switching applications. features ? low on-resistance r ds(on)1 = 40 m w max. (@ v gs = 10 v, i d = 15 a) r ds(on)2 = 60 m w max. (@ v gs = 4 v, i d = 15 a) ? low c iss c iss = 1500 pf typ. ? built-in g-s gate protection diodes ? high avalanche capability ratings quality grade standard please refer to "quality grade on nec semiconductor devices" (document number iei-1209) published by nec corporation to know the specification of quality grade on the devices and its recommended applica- tions. absolute maximum ratings (t a = 25 ?c) drain to source voltage v dss 60 v gate to source voltage v gss 20 v drain current (dc) i d(dc) 30 a drain current (pulse) * i d(pulse) 120 a total power dissipation (t c = 25 ?c) p t1 75 w total power dissipation (t a = 25 ?c) p t2 1.5 w channel temperature t ch 150 c storage temperature t stg C55 to +150 c single avalanche current ** i as 30 a single avalanche energy ** e as 90 mj * pw 10 m s, duty cycle 1 % ** starting t ch = 25 ?c, r g = 25 w , v gs = 20 v ? 0 2sk2411, 2SK2411-Z switching n-channel power mos fet industrial use the information in this document is subject to change without notice. document no. d13398ej1v0ds00 (1st edition) (previous no. tc-2492) date published march 1998 n cp(k) printed in japan 10.0 3.6 ?.2 1.4 0.2 2.8 ?.2 mp-25 (to-220) drain gate body diode gate protection diode source mp-25z(surface mount type) 4 1.3 ?.2 10.6 max. 0.75 ?.1 2.54 3.0 ?.3 4 (10.0) 4.8 max. 1.3 ?.2 0.5 ?.2 8.5 ?.2 1.0 0.5 1.5 max. 1.1 ?.4 3.0 ?.5 (0.5r) (0.8r) (2.54) (2.54) 1.0 ?.3 123 5.9 min. 15.5 max. 12.7 min. 6.0 max. 2.54 1 2 3 0.5 ?.2 2.8 ?.2 1.3 ?.2 4.8 max. 1. gate 2. drain 3. source 4. fin (drain) jedec: to-220ab package dimensions (in millimeter)
2sk2411, 2SK2411-Z 2 electrical characteristics (t a = 25 c) characteristic symbol min. typ. max. test conditions drain to source on-resistance r ds(on)1 31 40 v gs = 10 v, i d = 15 a drain to source on-resistance r ds(on)2 40 60 v gs = 4 v, i d = 15 a gate to source cutoff voltage v gs(off) 1.0 1.5 2.0 v ds = 10 v, i d = 1 ma forward transfer admittance | y fs |1527 v ds = 10 v, i d = 15 a drain leakage current i dss 10 v ds = 60 v, v gs = 0 gate to source leakage current i gss 10 v gs = 20 v, v ds = 0 input capacitance c iss 1500 v ds = 10 v output capacitance c oss 720 v gs = 0 reverse transfer capacitance c rss 190 f = 1 mhz turn-on delay time t d(on) 20 i d = 15 a rise time t r 260 v gs(on) = 10 v turn-off delay time t d(off) 130 v dd = 30 v fall time t f 150 r g = 10 w total gate charge q g 50 i d = 30 a gate to source charge q gs 5.0 v dd = 48 v gate to drain charge q gd 15 v gs = 10 v body diode forward voltage v f(s-d) 1.1 i f = 30 a, v gs = 0 reverse recovery time t rr 110 i f = 30 a, v gs = 0 reverse recovery charge q rr 320 di/dt = 100 a/ m s unit m w m w v s m a m a pf pf pf ns ns ns ns nc nc nc v ns nc the application circuits and their parameters are for references only and are not intended for use in actual design-in's. test circuit 1 avalanche capability test circuit 2 switching time r g = 25 w 50 w pg l v dd v gs = 20 v ? 0 bv dss i as i d v ds starting t ch r g = 10 w pg. 0 t r l v dd v gs t = 1 s duty cycle 1 % v gs wave form i d wave form i d 0 0 10 % 10 % 90 % 90 % 10 % 90 % i d v gs (on) t d (off) t d (on) t on t off t f t r test circuit 3 gate charge d.u.t. r l v dd 50 w i g = 2 ma pg. v dd r g v gs d.u.t. d.u.t. m
2sk2411, 2SK2411-Z 3 typical characteristics (t a = 25 c) derating factor of forward bias safe operating area total power dissipation vs. case temperature forward bias safe operating area drain current vs. drain to source voltage forward transfer characteristics 1000 0.1 40 60 80 100 120 140 160 20 40 60 80 100 20 40 60 80 100 120 140 160 20 40 60 80 100 100 10 1 1 10 100 0 2 20 40 60 80 100 4681012 10 30 90 70 50 0 10 510 100 1000 v gs - gate to source voltage - v v ds - drain to source voltage - v v ds - drain to source voltage - v t c - case temperature - ? t c - case temperature - ? p t - total power dissipation - w dt - percentage of rated power - % i d - drain current - a i d - drain current - a i d - drain current - a pulsed v ds = 10 v 0 20 0 1 25 ? 125 ? t a = ?5 ? power dissipation limited r ds (on) limited (at v gs = 10 v) 10 ms dc i d (pulse) pw = 10 s 100 s 1 ms t c = 25 ? single pulse i d (dc) pulsed v gs = 10 v v gs = 4 v v gs = 6 v m m
2sk2411, 2SK2411-Z 4 transient thermal resistance vs. pulse width drain to source on-state resistance vs. gate to source voltage forward transfer admittance vs. drain current gate to source cutoff voltage vs. channel temperature drain to source on-state resistance vs. drain current 1000 100 10 1 0.1 0.01 10 100 1 m 10 m 100 m 1 10 100 1000 single pulse pw - pulse width - s 1000 100 10 1 1 10 100 i d - drain current - a 60 50 40 30 20 10 0 0 5 10 15 20 i d = 15 a pulsed v gs - gate to source voltage - v 2.0 ?0 1.5 1.0 0.5 0 0 50 100 150 t ch - channel temperature - ? v ds = 10 v i d = 1 ma 60 1 i d - drain current - a 50 30 20 10 0 10 100 r ds (on) - drain to source on-state resistance - m w |y fs | - forward transfer admittance - s r th (t) - transient thermal resistance - ?/w r ds (on) - drain to source on-state resistance - m w v gs (off) - gate to source cutoff voltage - v 40 v ds = 10 v pulsed r th (ch-a) = 83.3 ?/w r th (ch-c) = 1.67 ?/w v gs = 10 v v gs = 4 v pulsed 25 ? 75 ? 125 ? t a = ?5 ? mm
2sk2411, 2SK2411-Z 5 drain to source on-state resistance vs. channel temperature source to drain diode forward voltage switching characteristics capacitance vs. drain to source voltage dynamic input/output characteristics reverse recovery time vs. drain current 1000 100 10 0 ?0 t ch - channel temperature - ? 10 20 30 40 50 60 70 80 ?5 0 25 50 75 125 150 100 v gs = 4 v v gs = 10 v 10 1 v ds - drain to source voltage - v 10 100 100 1000 10000 c rss c oss c iss v gs = 0 f = 1 mhz v sd - source to drain voltage - v i d - drain current - a 1000 100 10 1.0 0.1 1.0 10 100 t r t f t d (on) t d (off) i d - drain current - a q g - gate charge - nc 10 0.1 1.0 10 100 100 1000 di/dt = 50 a/ s v gs = 0 0 010203040506070 80 10 20 30 40 50 60 70 80 2 4 6 8 10 12 14 16 v ds v gs i d = 30 a r ds (on) - drain to source on-state resistance - m w c iss , c oss , c rss - capacitance - pf t rr - reverse recovery diode - ns t d (on) , t r , t d (off) , t f - switching time - ns v ds - drain to source voltage - v v gs - gate to source voltage - v i sd - diode forward current - a v dd = 30 v v gs = 10 v r g = 10 w v dd = 48 v 1 0 i d = 15 a 1.0 2.0 3.0 10 v v gs = 0 pulsed m
2sk2411, 2SK2411-Z 6 single avalanche energy vs. inductive load single avalanche energy derating factor 100 10 1.0 10 100 1 m 10 m l - inductive load - h v dd = 30 v v gs = 20 v ? 0 r g = 25 w i as = 30 a e as = 90 mj 100 80 60 40 20 0 25 50 75 100 125 150 starting t ch - starting channel temperature - ? v dd = 30 v r g = 25 w v gs = 20 v ? 0 i as 30 a i as - single avalanche energy - mj dt - energy derating factor - % mm
2sk2411, 2SK2411-Z 7 reference document name document no. nec semiconductor device reliability/quality control system. c11745e quality grade on nec semiconductor devices. c11531e semiconductor device mounting technology manual. c10535e ic package manual. c10943x guide to quality assurance for semiconductor devices. mei-1202 semiconductor selection guide. x10679e power mos fet features and application switching power supply. d12971e application circuits using power mos fet. d12972e safe operating area of power mos fet. d13085e the diode connected between the gate and source of the transistor serves as a protector against esd. when this device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
2sk2411, 2SK2411-Z [memo] no part of this document may be copied or reproduced in any form or by any means without the prior written consent of nec corporation. nec corporation assumes no responsibility for any errors which may appear in this document. nec corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. no license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of nec corporation or others. while nec corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. to minimize risks of damage or injury to persons or property arising from a defect in an nec semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. nec devices are classified into the following three quality grades: "standard", "special", and "specific". the specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. the recommended applications of a device depend on its quality grade, as indicated below. customers must check the quality grade of each device before using it in a particular application. standard: computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots special: transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) specific: aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. the quality grade of nec devices is "standard" unless otherwise specified in nec's data sheets or data books. if customers intend to use nec devices for applications other than those specified for standard quality grade, they should contact an nec sales representative in advance. anti-radioactive design is not implemented in this product. m4 96.5
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